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Si-Doped In0.23Ga0.77N/GaN Short-period Superlattice Tunneling Contact Layer Used on InGaN/GaN Laser Diode

著者名:
Tun, C.J.
Tu, R.C.
Sheu, J.K.
Chou, C.C.
Wang, T.C.
Tsai, C.E.
Chi, G.C.
さらに 2 件
掲載資料名:
State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-06
発行年:
2004
開始ページ:
254
終了ページ:
259
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774192 [1566774195]
言語:
英語
請求記号:
E23400/200406
資料種別:
国際会議録

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