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Hydrogen Diffusion Characterized by Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon at Temperatures Between 350 and 450℃

著者名:
掲載資料名:
High purity silicon VIII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-05
発行年:
2004
開始ページ:
419
終了ページ:
428
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774185 [1566774187]
言語:
英語
請求記号:
E23400/200405
資料種別:
国際会議録

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