Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

著者名:

掲載資料名:

High purity silicon VIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-05

発行年:

2004

開始ページ:

346

終了ページ:

356

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774185 [1566774187]

言語:

英語

請求記号:

E23400/200405

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015395
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	8th ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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