On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)

On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)

著者名:

Pantisano, L.

掲載資料名:

Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-10

発行年:

2005

開始ページ:

144

終了ページ:

158

総ページ数:

15

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774284 [1566774284]

言語:

英語

請求記号:

E23400/200510

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015393
シリーズID:	PA00000028
会議名:	DECON ; Satellite Symposium to ESSDERC
回次:	2005 ; 35th
会議開催地:	Grenoble, France
会議開催年:	2005.09.12-2005.09.16

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