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Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

著者名:
掲載資料名:
Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-08
発行年:
2005
開始ページ:
529
終了ページ:
537
総ページ数:
9
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774260 [1566774268]
言語:
英語
請求記号:
E23400/200508
資料種別:
国際会議録

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