A Simple Method to Model Nonrectangular-Gate Layout in SOI MOSFETs

A Simple Method to Model Nonrectangular-Gate Layout in SOI MOSFETs

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2005 : proceedings of the twentieth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-08

発行年:

2005

開始ページ:

472

終了ページ:

481

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774260 [1566774268]

言語:

英語

請求記号:

E23400/200508

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015391
シリーズID:	PA00000028
会議名:	SBMICRO
回次:	20th (2005)
会議開催地:	Sao Paulo, Brazil
会議開催年:	2005.09.04-2005.09.07

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