P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal | 東京工業大学附属図書館文献データベース

Blank Cover Image

P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal

著者名:

Vandervorst, W.

さらに 5 件

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-06

発行年:

2005

開始ページ:

338

終了ページ:

348

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774642 [1566774640]

言語:

英語

請求記号:

E23400/200506

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015389
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	4th ; 207th
会議開催地:	Quebec, Canada
会議開催年:	2005.05.16-2005.05.20

類似資料:

1 国際会議録 N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society	7 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society
2 国際会議録 Analysis of Junctions Formed in Strained Si/SiGe Substrates Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, … Materials Research Society	8 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society
3 国際会議録 The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement? Simoen, E., Eneman, G., Verheyen, P., Delhougne, R., Rooyackers, R., Loo, R., Vandervorst, W., De Meyer, K., Claeys, C. Electrochemical Society	9 国際会議録 The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society
4 国際会議録 Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen Electrochemical Society	10 国際会議録 Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices E.R. Simoen, G. Eneman, P. Verheyen, R. Loo, M. Bargallo Gonzalez Electrochemical Society
5 国際会議録 (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I.De, Janssens, T., Benedetti, … Materials Research Society	11 国際会議録 The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates Buca, D., Morschbacher, M.J., Hollander, B., Luysberg, M., Loo, R., Caymax, M., Mantl, S. Materials Research Society
6 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	12 国際会議録 Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes E.R. Simoen, M.B. Gonzalez, G. Eneman, P. Verheyen, C.L. Claeys Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12