61 Impact of Recessed S/D SiGe Integration Parameters on Device Performance
- 著者名:
Washington, L. Nouri, F. Verheyen, P. Moroz, V. Kawaguchi, M. Kim, Y. Samoilov, A. Jurczak, M. - 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2005-05
- 発行年:
- 2005
- 開始ページ:
- 515
- 終了ページ:
- 522
- 総ページ数:
- 8
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774635 [1566774632]
- 言語:
- 英語
- 請求記号:
- E23400/200505
- 資料種別:
- 国際会議録
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(3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor
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Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions
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