Blank Cover Image

59 Strain Effects on Transient Enhanced Diffusion and Deactivation of Arsenic Implanted in Silicon

著者名:
Dilliway, G. D. M.
Smith, A. J.
Hamilton, J. J.
Xu, L.
McNally, P. J.
Cooke, G.
Kheyrandish, H.
Cowern, N. E. B.
さらに 3 件
掲載資料名:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-05
発行年:
2005
開始ページ:
497
終了ページ:
504
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
言語:
英語
請求記号:
E23400/200505
資料種別:
国際会議録

類似資料:

1 国際会議録 Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

N.S. Bennett, A.J. Smith, C.S. Beer, L. O'Reilly, B. Colombeau, G.D. Dilliway, R. Harper, P.J. McNally, R. Gwilliam, …

Materials Research Society
7 国際会議録 The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon

Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C.

MRS - Materials Research Society
2 国際会議録 Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon

Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., …

Electrochemical Society
8 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G.

Materials Research Society
3 国際会議録 Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications

Cowern, N. E. B., Collart, E. J. H., Politiek, J., Bancken, P. H. L., Berkum, J. G. M. van, Larsen, K. Kyllesbech, …

MRS - Materials Research Society
9 国際会議録 TRANSIENT DIFFUSION OF SOPANTS IN SILICON: PHYSICS MODELING, AND PRACTICAL SIMULATIONS

Cowern, N.E.B.

Electrochemical Society
4 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion

Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A.

Electrochemical Society
10 国際会議録 Influence of H2 Preconditioning on the Nucleation and Growth of Self-Assembled Germanium Islands on Silicon (001)

Dilliway, Gabriela D.M., Cowern, Nicholas E.B., Xu, Lu, McNally, Patrick J., Jeynes, Chris, Mendoza, Emest, Ashburn, …

Materials Research Society
5 国際会議録 Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon

Dokumaci, O., Law, M. E., Krishnamoorthy, V., Jones, K. S.

MRS - Materials Research Society
11 国際会議録 Defects and Diffusion in Silicon An Overview

Cowern, N. E. B., Mannino, G., Stolk, P. A., Theunissen, M. J. J.

MRS - Materials Research Society
6 国際会議録 Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

Mannino, G., Cowern, N. E. B., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Boer, W. B. de, …

MRS - Materials Research Society
12 国際会議録 Structural and Compositional Evolution of Self-Assembled Germanium Islands on Silicon (001) During High Growth Rate LPCVD

Dilliway, Gabriela D. M., Cowern, Nicholas E. B., Jeynes, Chris, O'Reilly, Lisa, McNally, Patrick J., Bagnall, Darren M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12