31 New Materials, Processes and Device Structures for 65nm CMOS Technology Node and Beyond
- 著者名:
- 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2005-05
- 発行年:
- 2005
- 開始ページ:
- 259
- 終了ページ:
- 273
- 総ページ数:
- 15
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774635 [1566774632]
- 言語:
- 英語
- 請求記号:
- E23400/200505
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
(6.5) 12:15 - 12:35 PM - Design, Fabrication and Operation of Sub-65nm Strained-Si/Si1_xGex MOSFETS
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