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9 Ultra Shallow Junction Formation by Flash Annealing: The Challenges Aheac

著者名:
掲載資料名:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-05
発行年:
2005
開始ページ:
76
終了ページ:
82
総ページ数:
7
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774635 [1566774632]
言語:
英語
請求記号:
E23400/200505
資料種別:
国際会議録

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