Blank Cover Image

Present Reliability Issues in Ultrathin Oxynitride Films

著者名:
掲載資料名:
Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-01
発行年:
2005
開始ページ:
307
終了ページ:
326
総ページ数:
20
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774598 [1566774594]
言語:
英語
請求記号:
E23400/200501
資料種別:
国際会議録

類似資料:

1 国際会議録 *Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides

Groeseneken, G., Degraeve, R., Kaczer, B., Maes, H. E.

MRS-Materials Research Society
7 国際会議録 Hot Carrier Stress and Breakdown Impact on High-frequency MOSFET Analog Performance

Pantisano, L., Schreurs, D., Kaczer, B., Simoen, E., Groeseneken, G.

Electrochemical Society
2 国際会議録 Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability

Groeseneken, G., Kaczer, B., Degraeve, R.

Electrochemical Society
8 国際会議録 Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO₂ Capacitors

K. Martens, B. Kaczer, P. Roussel, G. Groeseneken, H. Maes

Electrochemical Society
3 国際会議録 INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY

Degraeve, R., Kaczer, B., Roussel, Ph., Groeseneken, G.

Electrochemical Society
9 国際会議録 Measurement technique, oxide thickness and area dependence of soft-breakdown

Nigam, T., Degraeve, R., Groeseneken, G., Heyns, M., Maes, H. E.

MRS-Materials Research Society
4 国際会議録 INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY

Degraeve, R., Kaczer, B., Roussel, Ph., Groeseneken, G.

Electrochemical Society
10 国際会議録 ESD Reliability Issues in RF CMOS Circuits

Radhakrishnan, M.K., Vassilev, V., Keppens, B., De Heyn, V., Natarajan, M., Groeseneken, G.

SPIE-The International Society for Optical Engineering
5 国際会議録 Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability

B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken

Electrochemical Society
11 国際会議録 NBTI Study on PMOS Devices with TiN/HfO2 Gate Stack and Process Induced Strain

A. K. Shickova, P. Verheyen, C. Eneman, E. San Andres, P. Absil, B. Kaczer, G. Groeseneken

Electrochemical Society
6 国際会議録 Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO₂ and High-k Dielectrics

S. Sahhaf, R. Degraeve, M.B. Zahid, G. Groeseneken

Materials Research Society
12 国際会議録 On the Breakdown Statistics and Mechanisms in Ultra-Thin Oxides and Nitrided Oxides

Groeseneken, G., Degraeve, R., De Blauwe, J., Roussel, P., Depas, M., Maes, H.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12