Blank Cover Image

Physical Mechanisms of Ultra-Thin Silicon Dioxide Degradation and Breakdown

著者名:
Vogel, E.M.  
掲載資料名:
Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2005-01
発行年:
2005
開始ページ:
279
終了ページ:
292
総ページ数:
14
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774598 [1566774594]
言語:
英語
請求記号:
E23400/200501
資料種別:
国際会議録

類似資料:

1 国際会議録 On the Breakdown Statistics and Mechanisms in Ultra-Thin Oxides and Nitrided Oxides

Groeseneken, G., Degraeve, R., De Blauwe, J., Roussel, P., Depas, M., Maes, H.

Electrochemical Society
7 国際会議録 POST-ANNEALING EFFECT ON THE RELIABILITY OF ULTRA-THIN SILICON DIOXIDE WITH POLYSILICON GATE

Yoneda, Kenji, Fukuzaki, Yoshiki, Satoh, Kazuo, Todokoro, Yoshihiro, Inoue, Morio

Materials Research Society
2 国際会議録 ACCELERATED DEGRADATION MECHANISMS IN AMORPHOUS SILICON THIN FILM TRANSISTORS .

Chung, I.J., Oh, C.H., Kim, W.Y., Hwang, J.Y., Kim, Y.S., Park, J.S., Lee, S.K., Han, M.K.

Materials Research Society
8 国際会議録 ELECTRICAL CHARACTERISTICS OF ULTRA-THIN MULTI-LAYERS OF POLY-Si AND SILICON DIOXIDE

Chan, Kevin K., Lee, Young H., Stanis, Carol L.

MRS - Materials Research Society
3 国際会議録 Swiching of Breakdown Conduction In Ultra-Thin Gate Oxide

Chen, T.P., Tse, M.S.

Electrochemical Society
9 国際会議録 Ultra-Thin Silicon Dioxide Prepared by Room Temperature Jet Vapor Deposition

Shi, Y., Wang, X.W., Ma, T.P., Cui, G.J., Tamagawa, T., Halpern, B.L.

Electrochemical Society
4 国際会議録 Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress

Chaparala,P., Suehle,J.S.

SPIE-The International Society for Optical Engineering
10 国際会議録 Degradation Study Of Ultra-Thin JVD Silicon Nitride MNSFETs

ManjulaRani, K.N., Rao, V. Ramgopal, Vasi, J.

Materials Research Society
5 国際会議録 Cadmium Sulphide Microcrystallite-Doped Silicon Dioxide Thin Films Prepared by RF-Sputtering: Growth and Physical Characterisation

Rolo G. A., Gomes M. J. M., Belsley M., Ribeiro L. J.

Kluwer Academic Publishers
11 国際会議録 Microstructure Evolution and Breakdown Mechanism Studies in MOSFET with Ultra Thin Gate Dielectrics in Nanometer Technology ERA

Lu, C. Y., Tung, C. H., Pey, K. L.

Electrochemical Society
6 国際会議録 Evaluation of the degradation dynamics of thin silicon dioxide films using model-independent procedures

Rodriguez, R., Nafria, M., Miranda, E., Sune, J., Aymerich, X.

MRS-Materials Research Society
12 国際会議録 A study of trap profiles in thin silicon dioxide films at dielectric breakdown using percolation model

Uno, S., Ishida, A., Okada, K., Sakura, T., Deguchi, K., Kamakura, Y., Taniguchi, K.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12