Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

著者名:

Habermehl, S. ( North Carolina State University, Raleigh, NC )
Lucovsky, G. ( North Carolina State University, Raleigh, NC )

掲載資料名:

AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California

シリーズ名:

AIChE meeting [papers]

シリーズ巻号:

1994

発行年:

1994

ペーパー番号:

18b

総ページ数:

6

出版情報:

New York: American Institute of Chemical Engineers

言語:

英語

請求記号:

A08000/950031

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015159
シリーズID:	PA00000179
会議名:	AIChE Annual Meeting
回次:	1994
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.11.13-1994.11.18
論文注記:	Fiche 21

類似資料:

1 国際会議録 Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition Stevens, G., Santos-Filho, P., Habermehl, S., Lucovsky, G. MRS - Materials Research Society	7 国際会議録 THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Kim, Sang S., Tsu, D. V., Lucovsky, G. Materials Research Society
2 国際会議録 MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND … Habermehl, S., He, S. S., Chen, Y. L., Lucovsky, G. MRS - Materials Research Society	8 国際会議録 Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society
3 国際会議録 CHARACTERIZATION OF SILICON-NITRIDE FILM GROWTH BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (PRECVD) Lu, Zhong, Ma, Yi, Habermehl, Scott, Lucovsky, Gerry MRS - Materials Research Society	9 国際会議録 Si-N BONDING AT THE SiO2/Si INTERFACES DURING DEPOSITION OF SiO2 BY THE REMOTE PECVD PROCESS Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G. Materials Research Society
4 国際会議録 QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S. Materials Research Society	10 国際会議録 STUDIES OF SiH2Cl2/H2 GAS PHASE CHEMISTRY FOR SELECTIVE THIN FILM GROWTH OF CRYSTALLINE SILICON, c-Si, USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Theil, J.A., Lucovsky, G., Hattangady, S.V., Fountain, G.G., Markunas, R.J. Materials Research Society
5 国際会議録 DEPOSITION OF GaN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (Remote PECVD) Choi, S.W., Bachmann, K.J., Lucovsky, G. Materials Research Society	11 国際会議録 SURFACE CLEANING PRIOR TO FORMATION OF Si/SiO2 INTERFACES BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G. Materials Research Society
6 国際会議録 *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD) Kim, Sang S., Tsu, D. V., Lucovsky, G. Materials Research Society	12 国際会議録 Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA) Lucovsky, G., Lu, Z., Lee, D.R. American Institute of Chemical Engineers

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