A physical understanding of the noise performance of MOS transistors for wireless and lightwave applications in the giga-bit regime (Invited Paper)
- 著者名:
- Jindal, R. P. ( Univ. of Louisiana at Lafayette (USA) )
- 掲載資料名:
- Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5844
- 発行年:
- 2005
- 開始ページ:
- 10
- 終了ページ:
- 22
- 総ページ数:
- 13
- 出版情報:
- Bellingham, Washington: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819458391 [0819458392]
- 言語:
- 英語
- 請求記号:
- P63600/5844
- 資料種別:
- 国際会議録
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9
国際会議録
A Comparative Study of Scaling Properties of MOS Transistors in CHE and CHISEL Injection Regime
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |