Metalorganic chemical vapor deposition and structural/optical characteristics of InGaN/GaN multiple quantum wells grown on sapphire for light emitting diode application

Metalorganic chemical vapor deposition and structural/optical characteristics of InGaN/GaN multiple quantum wells grown on sapphire for light emitting diode application

著者名:

Feng, Z. C. ( National Taiwan Univ. (Taiwan) )
Chen, J. -H. ( National Taiwan Univ. (Taiwan) )
Tsai, H. -L. ( National Taiwan Univ. (Taiwan) )
Yang, J. -R. ( National Taiwan Univ. (Taiwan) )
Li, A. G. ( ShenZhen Fangda GuoKe Optronics Technical Co. Ltd. (China) )

掲載資料名:

Photonic Materials, Devices, and Applications

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5840

発行年:

2005

開始ページ:

201

終了ページ:

211

総ページ数:

11

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819458353 [081945835X]

言語:

英語

請求記号:

P63600/5840-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015073
シリーズID:	PA00000029
会議名:	SPIE Microtechnologies : Photonic Materials, Devices, and Applications
回次:	2005
会議開催地:	Seville, Spain
会議開催年:	2005.05.09-2005.05.11

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