Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

著者名:

Bravo-Vasquez, J. P. ( Cornell Univ. (USA) )
Kwark, Y.-J. ( Cornell Univ. (USA) )
Ober, C. K. ( Cornell Univ. (USA) )
Cao, H. B. ( Intel Corp. (USA) )
Deng, H. ( Intel Corp. (USA) )

掲載資料名:

Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5753(1)

発行年:

2005

パート:

1

開始ページ:

109

終了ページ:

121

総ページ数:

13

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457332 [0819457337]

言語:

英語

請求記号:

P63600/5753-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014977
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
回次:	2005 : 22th
会議開催地:	San Jose, CA, USA
会議開催年:	2005.02.28-2005.03.02

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