Degradation of GaN-based high-power lasers and recent advancements (Invited Paper)

Degradation of GaN-based high-power lasers and recent advancements (Invited Paper)

著者名:

Takeya, M. ( Sony Corp. (Japan) )
Hashizu, T. ( Sony Corp. (Japan) )
Ikeda, M. ( Sony Corp. (Japan) )

掲載資料名:

Novel In-Plane Semiconductor Lasers IV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5738

発行年:

2005

開始ページ:

63

終了ページ:

71

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457127 [0819457124]

言語:

英語

請求記号:

P63600/5738

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014954
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Novel In-Plane Semiconductor Lasers
回次:	2005 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	2005.01.24-2005.01.27

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