Heteroepitaxy of high-quality Ge on Si by nanoscale seed pads grown through a SiO2 interlayer (Invited Paper)

Heteroepitaxy of high-quality Ge on Si by nanoscale seed pads grown through a SiO2 interlayer (Invited Paper)

著者名:

Li, Q. ( Univ. of New Mexico (USA) )

Jiang, Y.-B. ( Univ. of New Mexico (USA) )

Krauss, J.L. ( Univ. of Wisconsin/Madison (USA) )

Xu, H. ( Univ. of New Mexico (USA) )

Brueck, S.R.J. ( Univ. of New Mexico (USA) )

Hersee, S. ( Univ. of New Mexico (USA) )

Han, S.M. ( Univ. of New Mexico (USA) )

さらに 2 件

掲載資料名:

Quantum Dots, Nanoparticles, and Nanoclusters II

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5734

発行年:

2005

開始ページ:

75

終了ページ:

82

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457080 [0819457086]

言語:

英語

請求記号:

P63600/5734

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014950
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Quantum Dots, Nanoparticles, and Nanoclusters
回次:	2005 : 2nd
会議開催地:	San Jose, CA, USA
会議開催年:	2005.01.24-2005.01.25

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