Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers

Improvement of carrier confinement in blue light emitting diode with InGaN/GaN multiquantum barriers

著者名:

Lin, R.-M. ( Chang Gung Univ. (Taiwan) )
Wang, J.-C. ( Chang Gung Univ. (Taiwan) )
Lin, C.-H. ( Chang Gung Univ. (Taiwan) )
Nee, T.-E. ( Chang Gung Univ. (Taiwan) )

掲載資料名:

Physics and Simulation of Optoelectronic Devices XIII

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5722

発行年:

2005

開始ページ:

439

終了ページ:

445

総ページ数:

7

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819456960 [0819456969]

言語:

英語

請求記号:

P63600/5722

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014939
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
回次:	2005 : 13th
会議開催地:	San Jose, CA, USA
会議開催年:	2005.01.24-2005.01.27

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2 国際会議録 Characterization of the Carrier Confinement for InGaN/GaN Light Emitting Diode with Multiquantum Barriers Wang, Jen-Cheng, Lin, Chung-Han, Lin, Ray-Ming, Nee, Tzer-En, Fang, Bor-Ren, Wang, Ruey-Yu Materials Research Society	8 国際会議録 Disorder in InGaN light-emitting diodes Pophristic,M., Lukacs,S.J., Long,F.H., Tran,C.A., Ferguson,I.T. SPIE - The International Society for Optical Engineering
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