Calculation of valence subband structures for strained GalnP/AIGalnP quantum wells without axial approximation
- 著者名:
Xu, Y. ( Institute of Semiconductors, CAS (China) ) Zhu, X. ( Institute of Semiconductors, CAS (China) ) Gan, Q. ( Institute of Semiconductors, CAS (China) ) Song, G. ( Institute of Semiconductors, CAS (China) ) Cao, Q. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) ) Guo, L. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) ) Li, Y. ( Institute of Semiconductors, CAS (China) and E-O National Co., Ltd. (China) ) Chen, L. ( Institute of Semiconductors, CAS (China) ) - 掲載資料名:
- Semiconductor and Organic Optoelectronic Materials and Devices
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5624
- 発行年:
- 2000
- 開始ページ:
- 221
- 終了ページ:
- 225
- 総ページ数:
- 5
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819455789 [0819455784]
- 言語:
- 英語
- 請求記号:
- P63600/5624
- 資料種別:
- 国際会議録
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