
High-power Al-free active region InGaAsP/GaAs(λ=852 nm) laser diodes for atomic clocks and interferometry applications
- 著者名:
Vermersch, F. -J. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) Lecomte, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) Calligaro, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) Parillaud, O. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) Bansropun, S. ( Thales Research and Technology (France) ) Garcia, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) Krakowski, M. ( Alcatel-Thales III-V Lab. (France) and Thales Research and Technology (France) ) - 掲載資料名:
- Solid state laser technologies and femtosecond phenomena : 25-27 October, 2004, London, United Kingdom
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5620
- 発行年:
- 2004
- 開始ページ:
- 170
- 終了ページ:
- 178
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819455734 [0819455733]
- 言語:
- 英語
- 請求記号:
- P63600/5620
- 資料種別:
- 国際会議録
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SPIE - The International Society of Optical Engineering |
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