Blank Cover Image

Low-frequency noise behavior in GaN HEMTs on silicon substrate

著者名:
Bary, L. ( LAAS-CNRS (France) )
Angeli, E. ( LAAS-CNRS (France) )
Rennane, A. ( LAAS-CNRS (France) )
Sovbercaze-Pun, G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Tartarin, J.-G. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Minko, A. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Hoel, V. ( Institut d'Electronique de Microelectronique et de Nanotechnologie (France) )
Cordier, Y. ( CRHEA-CNRS (France) )
Dua, C. ( THALES-TRT/TIGER (France) )
Plana, R. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
Graffeuil, J. ( LAAS-CNRS (France) and Paul Sabatier Univ. (France) )
さらに 6 件
掲載資料名:
Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5470
発行年:
2004
開始ページ:
286
終了ページ:
295
総ページ数:
10
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819453969 [081945396X]
言語:
英語
請求記号:
P63600/5470
資料種別:
国際会議録

類似資料:

1 国際会議録 Using low-frequency noise characterization of AIGaN/GaN HEMT as a tool for technology assessment and failure prediction

Tartarin, J.-G., Soubercaze-Pun, G., Rennane, A., Bary, L., Plana, R., De Jaeger, J. C., Germain, M., Delage, S., …

SPIE - The International Society of Optical Engineering
7 国際会議録 Noise Behaviour in SiGe BiCMOS Technology

Regis, M, Plana, R., Borgarino, M, Tartarin, J.G., Llopis, O., Lafontaine, H., Kovacic, S.

ESA Publications Division
2 国際会議録 Hydrogen Induced Degradation in GaInP/GaAs HBTs Revealed by Low Frequency Noise Measurements

Tartarin, J.G., Escotte, L., Borgarino, M., Plana, R., Graffeuil, J.

Materials Research Society
8 国際会議録 Silicon micro-electro-mechanical systems for millimeter-wave applications

Grenier,K., Pons,P., Parra,T., Plana,R., Graffeuil,J.

SPIE - The International Society for Optical Engineering
3 国際会議録 Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

Malbert, N., Labat, N., Curutchet, A., Touboul, A., Gaquiere, C., Minko, A.

SPIE-The International Society for Optical Engineering
9 国際会議録 Low Frequency Noise in n-GaN with High Electron Mobility

Rumyantsev, S. L., Look, D. C., Levinshtein, M. E., Asif Khan, M., Simin, G., Adivarahan, V., Molnar, R. J., Shur, M. S.

Trans Tech Publications
4 国際会議録 Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements

Aubry, R., Jacquet, J.C., Dua, C., Gerard, H., Dessertenne, B., di Forte-Poisson, M.A., Cordier, Y., Delage, S.L.

Trans Tech Publications
10 国際会議録 Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

Fabrice Semond, Yvon Cordier, Franck Natali, Arnaud Le Louarn, Stéphane Vézian, Sylvain Joblot, Sébastien Chenot, …

Materials Research Society
5 国際会議録 Optimizing SiGe HBTs Technology Using Small-Signal and High Frequency Noise Device's Modeling

Tartarin, J.G., Cibiel, G., Monroy, A., Goascoz, V.Le, Graffeuil, J.

Materials Research Society
11 国際会議録 Silicon MEM technology for millimeter-wave applications

Grenier,K., Dubuc,D., Pons,P., Plana,R., Parra,T., Graffeuil,J.

SPIE-The International Society for Optical Engineering
6 国際会議録 LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices

Di Forte Poisson, M-A., Magis, M., Tordjman, M., Aubry, R., Pesohang, M., Delage, S.L., Persio, J. Di, Grimbert, B., …

Materials Research Society
12 国際会議録 Millimeter-wave monolithic integrated receivers based on GaAs micromachining

G. Konstantinidis, D. Neculoiu, A. Stavinidris, Z. Chatzopoulos, A. Muller, K. Tsagaraki, D. Vasilache, I. Petrini, C. …

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12