1.6 μm Emission From InAs Quantum Dots Grown on a GaAs Substrate Using an AlGaAsSb Metamorphic Buffer

1.6 μm Emission From InAs Quantum Dots Grown on a GaAs Substrate Using an AlGaAsSb Metamorphic Buffer

著者名:

Balakrishnan, G.

掲載資料名:

Quantum confined semiconductor nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

737

発行年:

2003

開始ページ:

19

終了ページ:

48

総ページ数:

36

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996748 [1558996745]

言語:

英語

請求記号:

M23500/737

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014608
シリーズID:	PA00000011
会議名:	Symposium on quantum confined semiconductor nanostructures
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.05

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