Influence of Defects on Current Transport in GaN/InGaN Multiple Quantum Well Light-Emitting Diodes
- 著者名:
Cao, X.A. Stokes, E.B. LeBoeuf, S.F. Sandvik, P.M. Kretchmer, J. Walker, D. - 掲載資料名:
- Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 722
- 発行年:
- 2002
- 開始ページ:
- 65
- 終了ページ:
- 70
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996588 [1558996583]
- 言語:
- 英語
- 請求記号:
- M23500/722
- 資料種別:
- 国際会議録
類似資料:
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8
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Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD [5941-28]
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