Progress In The Preparation Of Aluminum Nitride Substrates From Bulk Crystals | 東京工業大学附属図書館文献データベース

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Progress In The Preparation Of Aluminum Nitride Substrates From Bulk Crystals

著者名:

Schowalter, L.J.

Raghothamachar, B.

さらに 8 件

掲載資料名:

Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

722

発行年:

2002

開始ページ:

5

終了ページ:

14

総ページ数:

10

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996588 [1558996583]

言語:

英語

請求記号:

M23500/722

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014595
シリーズID:	PA00000011
会議名:	Symposium on materials and devices for optoelectronics and microphotonics
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

類似資料:

1 国際会議録 Growth of Self-Seeded Aluminum Nitride by Sublimation-Recondensation and Substrate Preparation Rojo, J. Carlos, Slack, Glen A., Morgan, Kenneth, Schowalter, Leo J., Dudley, Michael Materials Research Society	7 国際会議録 MOCVD Growth of GaN on Bulk AIN Substrates Lu, Hongqiang, Bhat, Ishiwara, Lee, Byung-Chan, Slack, Glen, Schowalter, Leo J. MRS - Materials Research Society
2 国際会議録 The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN Tamulaitis, G., Yilmaz, I., Shur, M.S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J.C., Schowalter, … Materials Research Society	8 国際会議録 The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Alumimm Nitride on SiC (0001) Substrates Gu, Z., Edgar, J.H., Raghothamachar, B., Dudley, M., Zhuang, D., Sitar, Z. Trans Tech Publications
3 国際会議録 Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates Hu, X., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Tamulaitis, G., Yilmaz, I., Shur, M.S., Rojo, J.C., … Materials Research Society	9 国際会議録 Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates Schowalter, L. J., Shusterman, Y., Wang, R., Bhat, I., Arunmozhi, G., Slack, G. A. MRS - Materials Research Society
4 国際会議録 Preparation and characterization of single-crystal aluminum nitride substrates Schowalter, L. J., Rojo, J. C., Yakolev, N., Shusterman, Y., Dovidenko, K., Wang, R., Bhat, I., Slack, G. A. MRS-Materials Research Society	10 国際会議録 Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AIN substrate [5941-07] Shahedipour-Sandvik, F., Grandusky, J. R, Jamil, M., Jindal, V., Schujman, S. B., Schowalter, L J., Liu, R., Ponce, F. … SPIE - The International Society of Optical Engineering
5 国際会議録 Stimulated Emission at 258 nm in AIN/AlGaN QuantumWells Grown on Bulk AIN Substrates Gaska, R., Fareed, Q., Tamulaitis, G., Yilmaz, I., Shur, M. S., Chen, C., Yang, J., Kuokstis, E., Khan, A., Rojo, J. C., … Materials Research Society	11 国際会議録 Progress in III-nitride-based white light sources (Invited Paper) Gaska, R., Zukauskas, A., Shur, M.S., Khan, M.A. SPIE-The International Society for Optical Engineering
6 国際会議録 Properties of Crucible Materials for Bulk Growth of AlN Slack, Glen A., Whitlock, Jon, Morgan, Ken, Schowalter, Leo J. Materials Research Society	12 国際会議録 Defect Content Evaluation in Single-Crystal AlN Wafers Bondokov, Robert T., Morgan, Kenneth E., Shetty, Raj, Liu, Wayne, Slack, Glen A., Goorsky, Mark, Schowalter, Leo J. Materials Research Society

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