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Roughness of electronic interfaces in GaAs p-n Multilayers Investigated by Cross-Sectional Scanning Tunneling Microscopy

著者名:
掲載資料名:
Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
719
発行年:
2002
開始ページ:
359
終了ページ:
364
総ページ数:
6
出版情報:
Warrendale, Pa: Materials Research Society
ISSN:
02729172
ISBN:
9781558996656 [1558996659]
言語:
英語
請求記号:
M23500/719
資料種別:
国際会議録

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