Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications? | 東京工業大学附属図書館文献データベース

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Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications?

著者名:

Niedernostheide, F.-J.

さらに 4 件

掲載資料名:

Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

719

発行年:

2002

開始ページ:

257

終了ページ:

262

総ページ数:

6

出版情報:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781558996656 [1558996659]

言語:

英語

請求記号:

M23500/719

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014592
シリーズID:	PA00000011
会議名:	Symposium on defect and impurity engineered semiconductors and devices
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

類似資料:

1 国際会議録 A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications Job, R., Ulyashin, A.G., Fahrner, W.R., Niedernostheide, F.J., Schulze, H.J., Simoen, E., Claeys, C.L., Tonelli, G. SPIE-The International Society for Optical Engineering	7 国際会議録 Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon Raft, J.M., Simoen, E., Claeys, C., Ulyashin, A., Job, R., Fahrner, W., Versluys, J., Clauws, P., Lozano, M, Campabadal, … Electrochemical Society
2 国際会議録 THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON Simoen, E., Claeys, C., Job, R., Ulyashin, A.G., Fahrner, W.R., Tonelli, G., Degryse, O., Clauws, P. Electrochemical Society	8 国際会議録 Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone Ulyashin, U.G., Petlitskii, A.N., Job, R., Fahrner, W.R. Electrochemical Society
3 国際会議録 THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON Simoen, E., Claeys, C., Job, R., Ulyashin, A.G., Fahrner, W.R., Tonelli, G., Degryse, O., Clauws, P. Electrochemical Society	9 国際会議録 Formation and Annihilation of Hydrogen Related Donor States in Proton Implanted and Subsequently Plasma Hydrogenated N-Type Float Zone Silicon R. Job, F. Niedernostheide, H. Schulze Electrochemical Society
4 国際会議録 Low temperature Doping of Silicon by Hydrogen Plasma Treatments* Job, R., Ulyashin, A.G., Ma, Y., Fahnwr, W.R., Simoen, E., Rafi, J.M., Claeys, C., Niedernostheide, F.J., Schulze, H.J. Electrochemical Society	10 国際会議録 A Two-Step Low-Temperature Process for p-n Junction Formation Due to Hydrogen-Enhanced Thermal Donor Formation in p-Type Czochralski Silicon Job, R., Fahrner, W. R., Kazuchits, N. M., Ulyashin, A. G. MRS - Materials Research Society
5 国際会議録 P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon Huang, Y.L., Simoen, E., Job, R., Claeys, C., Dungen, W., Ma, Y., Fahrner, W.R., Versluys, J., Clauws, P. Materials Research Society	11 国際会議録 Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon Simoen, E., Huang, Y. L., Claeys, C., Raft, J. M., Job, R., Fahrner, W. R., Versluys, J., Clauws, P. Electrochemical Society
6 国際会議録 Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon Rafi, J.M., Simoen, E., Claeys, C., Ulyashin, A., Job, R., Fahrner, W., Versluys, J., Clauws, P., Lozano, M., … SPIE-The International Society for Optical Engineering	12 国際会議録 Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation Reinhart Job, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze Materials Research Society

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