Effect Of Fluorine On The Diffusion Of Boron In Amorphous Silicon

Effect Of Fluorine On The Diffusion Of Boron In Amorphous Silicon

著者名:

掲載資料名:

Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

717

発行年:

2002

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996533 [1558996532]

言語:

英語

請求記号:

M23500/717

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014590
シリーズID:	PA00000011
会議名:	Symposium on silicon front-end junction formation technologies
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.02-2002.04.04

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2 国際会議録 The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon Robertson, L.S., Brindos, R., Jones, K. S., Law, Mark E., Downey, D. F., Falk, S., Liu, J. Materials Research Society	8 国際会議録 Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon Jones, K.S., Liu, J., Zhang, L. Electrochemical Society
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