Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon
- 著者名:
- 掲載資料名:
- Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 717
- 発行年:
- 2002
- 開始ページ:
- 129
- 終了ページ:
- 134
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996533 [1558996532]
- 言語:
- 英語
- 請求記号:
- M23500/717
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
7
国際会議録
(3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
9
国際会議録
Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |