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Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitors by Hydrogen Etching of the Substrate

著者名:
掲載資料名:
Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
716
発行年:
2002
開始ページ:
171
終了ページ:
176
総ページ数:
6
出版情報:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558996526 [1558996524]
言語:
英語
請求記号:
M23500/716
資料種別:
国際会議録

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