Degradation And Silc Effects Of Rpecvd Sub-2.0Nm Oxide/Nitride (O/N) And Oxynitride Dielectrics Under Constant Current Stress

Degradation And Silc Effects Of Rpecvd Sub-2.0Nm Oxide/Nitride (O/N) And Oxynitride Dielectrics Under Constant Current Stress

著者名:

掲載資料名:

Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

716

発行年:

2002

開始ページ:

103

終了ページ:

108

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996526 [1558996524]

言語:

英語

請求記号:

M23500/716

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014589
シリーズID:	PA00000011
会議名:	Symposium on silicon materials - processing characterization and reliability
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

類似資料:

1 国際会議録 Imdependent tunneling reductions relative to homogeneous oxide dielectrics from i)Nitrided interfaces, and ii) Physically-thicker stacked oxide/nitride and … Lucovsky, Gerry, Wu, Yider, Lee, Yi-Mu, Yang, Hanyang, Niimi, Hiro MRS-Materials Research Society	7 国際会議録 Improved performance and reliability in aggressively-scaled NMOS and PMOS FETs: i)Monolyaer interface nitridation, and ii)Replacement of stacked oxide/nitride … Yang, Hanyang, Niimi, Hiro, Lucovsky, Gerry MRS-Materials Research Society
2 国際会議録 Aggressively Scaled P-Channel MOSFETs With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics Wu, Y., Lucovsky, G. MRS - Materials Research Society	8 国際会議録 Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA) Lucovsky, G., Lu, Z., Lee, D.R. American Institute of Chemical Engineers
3 国際会議録 Degradation in Hafnium Oxynitride High-k Dielectric under Nanoscaled Ramped Voltage Stress by Using Conductive Atomic Force Microscopy Y. Wu, T. Cheng, H. Chen Electrochemical Society	9 国際会議録 Dielectric Relaxation and Defect Generation Under Pulsed and Constant Voltage Stressing of Ultrathin TiO₂ Films on … M.K. Bera, S. Saha, C.K. Maiti Electrochemical Society
4 国際会議録 The Effects of Interfacial Suboxide Transition Regions On Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics Yang, H., Niimi, H., Wu, Y., Lucovsky, G. MRS - Materials Research Society	10 国際会議録 Phase Separation by Rapid Thermal Annealing in Si-Sub-Oxides and -Nitrides Formed by Plasma CVD Banerjee, A., Lucovsky, G. MRS - Materials Research Society
5 国際会議録 SILICON OXYNITRIDE AND OXIDE-NITRIDE-OXIDE GATE DIELECTRICS BY CONBINED PLASMA-RAPID THERMAL PROCESSING Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society	11 学術雑誌 Electrochemical performance of a nickel-rich LiNi_0.6Co_0.2Mn_0.2O₂ cathode material for lithium-ion batteries under … Kai-lin Cheng, Dao-bin Mu, Bo-rong Wu, Lei Wang, Ying Jiang, Rui Wang Editorial department of International journal of minerals, metallurgy and materials
6 国際会議録 Nitrided Silicon Oxide Gate Dielectrics for Submicron Device Technology Lucovsky, G. MRS - Materials Research Society	12 国際会議録 NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology Hao, C.-C., Chi, M.-H., Chen, C.-C., Lin, H.-J., Lin, Y.-F., Hsieh, C.H., Lee, C.H., Chang, K.H., Wu, H.T., Shen, C.-H. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12