Thickness Effect On Nickel Silicide Formation And Thermal Stability For Ultra Shallow Junction CMOS

Thickness Effect On Nickel Silicide Formation And Thermal Stability For Ultra Shallow Junction CMOS

著者名:

Zhao, F.F.

掲載資料名:

Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

716

発行年:

2002

開始ページ:

41

終了ページ:

46

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996526 [1558996524]

言語:

英語

請求記号:

M23500/716

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014589
シリーズID:	PA00000011
会議名:	Symposium on silicon materials - processing characterization and reliability
回次:	2002
会議開催地:	San Francisco, CA, USA
会議開催年:	2002.04.01-2002.04.05

類似資料:

1 国際会議録 Fundamental Issues in Rapid Thermal Annealing (RTA), Spike RTA and Excimer Laser Annealing (ELA) for the Formation of Shallow p+/n Junctions Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Tung, C.H., Lu, Y.F. Electrochemical Society	7 国際会議録 SILICIDED SHALLOW JUNCTION FORMATION USING ION IMPLANTATION AND THERMAL ANNEALING Rubin, Leonard M., Herbots, N., Hoffman, D., Ma, D. Materials Research Society
2 国際会議録 Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society	8 国際会議録 A NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI Kwong, D.L., Ku, Y.H., Lee, S.K., Alvi, N.S., Chu, P., Zhou, Y., White, J.M. Materials Research Society
3 国際会議録 SHALLOW SILICIDED JUNCTIONS FOR VLSI CMOS TRANSISTORS BY FURNACE AND RAPID THERMAL PROCESSING Butler, A.L., Foster, D.J., Pickering, A.J. Materials Research Society	9 国際会議録 6 Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formation Lerch, W., Paul, S., Downey, D. F., Arevalo, E. A. Electrochemical Society
4 国際会議録 State of the Art Techniques for Ultra-Shallow Junction Formation Lerch, W., Bayha, B., Downey, D.F., Arevalo, E. Electrochemical Society	10 国際会議録 Ultra-Shallow Junction Formation of BF2+ Implants Using a Low-Pressure, Hot-Wall Rapid Thermal Anneal Parihar, V., Atanos, A.J., Reddy, K., Daviet, J.-F. Electrochemical Society
5 国際会議録 RF and Microwave Annealing for Ultra Shallow Junction Formation Thompson, K., Booske, J.H., Downey, D.F., Gianchandani, Y., Cooper, R. Electrochemical Society	11 国際会議録 Formation and Stability of Ni(Pt) Silicide on (100)Si and (111)Si Mangelinck, D., Dai, J. Y., Lahiri, S. K., Ho, C. S., Osipowicz, T. MRS - Materials Research Society
6 国際会議録 Ultra Shallow Junctions: Formation, Characterization, and Modeling Osburn, C.M., Chevacharoenkul, S., Wang, Q.F., Tsai, J.Y., Cowen, A., Rose, J., Zhang, X., Kellam, M. Electrochemical Society	12 国際会議録 Ultra-Shallow Junction Formation Using Rapid Thermal Processing A. Jain Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12