Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC

Stress Origin and Relaxation in Epitaxial AlN Thin Films on SiC

著者名:

Bathe, Ravi

掲載資料名:

Current issues in heteroepitaxial growth--stress relaxation and self assembly : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

696

発行年:

2002

開始ページ:

87

終了ページ:

92

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996328 [155899632X]

言語:

英語

請求記号:

M23500/696

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014571
シリーズID:	PA00000011
会議名:	Symposium on current issues in heteroepitaxial growth
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.29

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