Strain Relaxation of He+ Implanted, Pseudomorphic Si1-xGex Layers on Si(100)
- 著者名:
Hollander, B. Mantl, S. Lenk, St. Trinkaus, H. Kirch, D. Luysberg, M. Hackbarth, Th. Herzog, H.-J. Fichtner, P.F.P. - 掲載資料名:
- Current issues in heteroepitaxial growth--stress relaxation and self assembly : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 696
- 発行年:
- 2002
- 開始ページ:
- 75
- 終了ページ:
- 80
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996328 [155899632X]
- 言語:
- 英語
- 請求記号:
- M23500/696
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
4
国際会議録
Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Plenum Press |
MRS - Materials Research Society |