Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes | 東京工業大学附属図書館文献データベース

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Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes

著者名:

Abernathy, C.R.

さらに 5 件

掲載資料名:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

693

発行年:

2002

開始ページ:

713

終了ページ:

718

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

言語:

英語

請求記号:

M23500/693

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014569
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.30

類似資料:

1 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society	7 国際会議録 Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on GaN by Plasma Assisted Gas Source Molecular Beam Epitaxy Onstine, A.H., Gila, B.P., Kim, J., Stodilka, D., Allums, K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society
2 国際会議録 Growth of Scandium Magnesium Oxide on GaN Onstine, A. H., Herrero, A., Gila, B. P., Kim, J., Mehandru, R., Abernathy, C. R., Ren, F., Pearton, S. J. Materials Research Society	8 国際会議録 The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation Gila, B. P., Luo, B., Kim, J., Mehandru, R., LaRoche, J. R., Onstine, A. H., Lambers, E., Siebein, K., Abernathy, C. R., … Materials Research Society
3 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., … Materials Research Society	9 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide Kim. J., Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo. B., Oristine, A., Abernathy, C.R., … Electrochemical Society
4 国際会議録 Annealing Behavior of Ar Implanted GaN Luo, B., Johnson, J.W., Ren, F., Allums, K.K., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, TN, Wilkins, R., … Electrochemical Society	10 国際会議録 Growth of MgCaO on GaN Onstine, A.H., Gila, B.P., Kim, J., Herrero, A., Mehandru, R., Abernathy, C.R., Ren, B.F., Pearton, S.J. Electrochemical Society
5 国際会議録 Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS Gila, B.P., Lambers, E., Luo, B., Onstine, A.H., Allums, K.K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society	11 国際会議録 Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs Kim, J., Gila, B.P., Mehandnj, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A., Abernathy, C.R., Pearton, … Electrochemical Society
6 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Kim, Jihyun, Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A, Abernathy, C.R., … Materials Research Society	12 国際会議録 Surface Preparation and Oxide Growth for GaN MOSFETs* Gila, B.P., Johnson, J.W., Lee, K.N., Krishnamoorthy, V., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society

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