GaNXAs1-X Growth by Molecular Beam Epitaxy with Dispersive Nitrogen
- 著者名:
- 掲載資料名:
- GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 693
- 発行年:
- 2002
- 開始ページ:
- 49
- 終了ページ:
- 54
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996298 [155899629X]
- 言語:
- 英語
- 請求記号:
- M23500/693
- 資料種別:
- 国際会議録
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4
国際会議録
Epitaxial Growth of GaAs in Deep Dielectric Windows Using Solid Source Molecular Beam Epitaxy
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