Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy

著者名:

掲載資料名:

GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

693

発行年:

2002

開始ページ:

17

終了ページ:

22

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996298 [155899629X]

言語:

英語

請求記号:

M23500/693

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014569
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.30

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