Radiative Recombination Processes of Thermal Donors in Silicon

Radiative Recombination Processes of Thermal Donors in Silicon

著者名:

Pizzini, S.

掲載資料名:

Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

692

発行年:

2002

開始ページ:

275

終了ページ:

282

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996281 [1558996281]

言語:

英語

請求記号:

M23500/692

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014568
シリーズID:	PA00000011
会議名:	Symposium on progress in semiconductor materials for optoelectronic applications
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.29

類似資料:

1 国際会議録 Study of the radiative and non-radiative recombination processes at dislocations in silicon by photoluminescence and LBIC measurements Pizzini, S., Binetti, S., Acciarri, M., Casati, M. MRS-Materials Research Society	7 国際会議録 EFFECT OF GRAIN BOUNDARY SEGREGATION ON THE TRANS- BARRIER CONDUCTIVITY OF POLYCRYSTALLINE SILICON Pizzini, S., Acciarri, M. Materials Research Society
2 国際会議録 About the Electrical and Structural Properties of Erbium Thermally Diffused in single Crystal silicon Binetti, S., Acciarri, M., Gelmi, I., Pizzini, S. MRS - Materials Research Society	8 国際会議録 Characterization of Nanocrystalline Silicon Film Grown by LEPECVD for Photovoltaic Applications Bollani, M., Binetti, S., Acciarri, M., Fumagalli, L., Arcari, A., Pizzini, S., Kanel, H. von Materials Research Society
3 国際会議録 Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers Le Donne, A., Binetti, S., Acciarri, M., Castaldini, A., Nava, F., Cavallini, A., Pizzini, S. Trans Tech Publications	9 国際会議録 Effect of Pressure-Enhanced Single Step Annealing on the Silicon Photoluminescence Binetti, S., Donne, A.Le, Emtsev Jr., V.V., Emtsev, V.V., Pizzini, S. Materials Research Society
4 国際会議録 Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy Binetti, S., Le Donne, A., Acciarri, M., Cerminara, M., Pizzini, S. Trans Tech Publications	10 国際会議録 Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors Bertuccio, G., Binetti, S., Caccia, S., Casiraghi, R., Castaldini, A., Cavallini, A., Lanzieri, C., Donne, A. Le, Nava, … Trans Tech Publications
5 国際会議録 Chemistry of Point Defect in Silicon and its Applications in Semiconductor Technology Pizzini, S., Binetti, S., Acciarri, M. MRS - Materials Research Society	11 国際会議録 *RECOMBINATION ACTIVITY OF INDIVIDUAL EXTENDED DEFECTS IN SILICON Cavallini, A., Castaldini, A. Materials Research Society
6 国際会議録 INTERACTION OF POINT AND EXTENDED DEFECTS IN SILICON: THEIR INFLUENCE ON THE POLYCRYSTALLINE SILICON SUBSTRATE QUALITY FOR HIGH EFFICIENCY SOLAR CELLS Pizzini, S., Acciarri, M., Binetti, S., Acerboni, S., Savigni, C. Electrochemical Society	12 国際会議録 RADIATIVE RECOMBINATION MECHANISMS IN POROUS SILICON Gardelis, S., Hamilton, B., Kubiak, R.A., Whall, T.E., Parker, E.C.H. Materials Research Society

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