Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate
- 著者名:
- 掲載資料名:
- Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 692
- 発行年:
- 2002
- 開始ページ:
- 253
- 終了ページ:
- 258
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996281 [1558996281]
- 言語:
- 英語
- 請求記号:
- M23500/692
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Electrochemical Society |
2
国際会議録
Proton and H+-ion radiation effect on intersubband transition in GaAs/AlGaAs multiple quantum wells
SPIE-The International Society for Optical Engineering |
Materials Research Society |
3
国際会議録
ヲテ-ray Irradiation Effect on the Intersubband Transition in InGaAs/AlGaAs Multiple Quantum Wells
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
MRS-Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |