Photoluminescence from Er-Implanted 4H and 6H-SiC

Photoluminescence from Er-Implanted 4H and 6H-SiC

著者名:

掲載資料名:

Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

692

発行年:

2002

開始ページ:

233

終了ページ:

242

総ページ数:

10

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996281 [1558996281]

言語:

英語

請求記号:

M23500/692

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014568
シリーズID:	PA00000011
会議名:	Symposium on progress in semiconductor materials for optoelectronic applications
回次:	2001
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.26-2001.11.29

類似資料:

1 国際会議録 Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process Uekusa, S., Maruyama, H. Trans Tech Publications	7 国際会議録 Optical Properties of Al0.70Ga0.30As:Er,Yb Uekusa, Shin-ichiro, Tanaka, Isao, Arai, Tomoyuki Materials Research Society
2 国際会議録 The Er3+ and Yb3+-related emission from Er,Yb co-implanted Al0.70Ga0.30As/GaAs prepared MOCVD method Arai, Tomoyuki, Uekusa, Shin-ichiro Materials Research Society	8 国際会議録 Annealing Time Dependence on 1.5 μm Photoluminescence of Laser-Ablated β-FeSi2 Uekusa, Shin-ichiro, Hossain, Mohammad Zakir, Fukuda, Tomohiro, Miura, Noboru Materials Research Society
3 国際会議録 Evaluation on Defects of Er and Yb Implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy Arai, Tomoyuki, Uekusa, Shin-ichiro, Uedono, Akira Materials Research Society	9 国際会議録 Luminescence Properties of Er Implanted Polycrystalline 3C SiC Uekusa,S.-I., Awahara,K., Kumagai,M. Trans Tech Publications
4 国際会議録 Influence of Er Depth Profiles on Luminescence Properties of Er-Doped GaN Uekusa, Shin-ichiro, Hirano, Tomoaki Materials Research Society	10 国際会議録 Optical Properties of Si and Ge/Si Nanocrystals in Silicon Oxide Matrix Shin-ichiro Uekusa, Atsuhiko Kushida Materials Research Society
5 国際会議録 Photoluminescence and Raman characterization from Er-implanted In_xGa_1-x As bulk crystal T. Arai, S. Uekusa Society of Photo-optical Instrumentation Engineers	11 国際会議録 LOW TEMPERATURE PHOTOLUMINESCENCE FROM GaAs IMPINGED BY MASS-SEPARATED LOW-ENERGY C+ ION BEAMS DURING MOLECULAR BEAM EPITAXY Iida, Tsutomu, Makita, Yunosuke, Winter, Stefan, Kimura, Shinji, Tsai, Yushin, Kawasumi, Yoko, Fons, Paul, Yamada, … MRS - Materials Research Society
6 国際会議録 Luminescence Properties of Eu Ion-Implanted GaN Uekusa, Shin-ichiro, Tanaka, Isao Materials Research Society	12 国際会議録 1.54 mm photoluminescence of Er and Er + O implanted 6H SiC Kozanecki,A., Jantsch,W., Lanzerstorfer,S., Sealy,B.J., Jackson,S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12