Nature and Formation of Non-Radiative Defects in GaNAs and InGaAsN
- 著者名:
Chen, W.M. Thinh, N.Q. Buyanova, I.A. Hai, P.N. Xin, H.P. Tu, C.W. Li, Wei Pessa, M. - 掲載資料名:
- Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 692
- 発行年:
- 2002
- 開始ページ:
- 67
- 終了ページ:
- 72
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996281 [1558996281]
- 言語:
- 英語
- 請求記号:
- M23500/692
- 資料種別:
- 国際会議録
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10
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GaInNAs/GaAs Multiple Quantum Wells at 1.3 μm Wavelength Grown by Gas-Source Molecular Beam Epitaxy
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