Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf)O2/Si One Transistor Memory Devices

Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf)O2/Si One Transistor Memory Devices

著者名:

掲載資料名:

Ferroelectric Thin Films X : symposium held November 25-29, 2001, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

688

発行年:

2002

開始ページ:

371

終了ページ:

376

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996243 [1558996249]

言語:

英語

請求記号:

M23500/688

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014564
シリーズID:	PA00000011
会議名:	Symposium on ferroelectric thin films
回次:	10th
会議開催地:	Boston, MA, USA
会議開催年:	2001.11.25-2001.11.29

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