Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
- 著者名:
Cheong, M.G. Kim, K.S. Kim, C.S. Choi, R.J. Yoon, H.S. Yu, S.W. Hong, Y.K. Hong, C.-H. Suh, E.-K. Lee, H.J. - 掲載資料名:
- Mechanisms of surface and microstructure evolution in deposited films and film structures : symposium held April 17-20, 2001, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 672
- 発行年:
- 2001
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996083 [1558996087]
- 言語:
- 英語
- 請求記号:
- M23500/672
- 資料種別:
- 国際会議録
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Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD
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