A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide Using High Selective CeO2 Slurry

A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide Using High Selective CeO2 Slurry

著者名:

掲載資料名:

Chemical-mechanical polishing 2001 -- advances and future challenges : symposium held April 18-20, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

671

発行年:

2001

総ページ数:

5

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996076 [1558996079]

言語:

英語

請求記号:

M23500/671

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014554
シリーズID:	PA00000011
会議名:	Symposium On Chemical-Mechanical Polishing
回次:	2001
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.18-2001.04.20

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