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The Electrical Characteristics of the MOSCAP Structures with W/WNx/poly Si1-xGex Gates Stack

著者名:
Kang, S.-K.
Kim, J.J.
Ko, D.-H.
Ahn, T.H.
Yeo, I.S.
Lee, T.W.
Lee, Y.H.
さらに 2 件
掲載資料名:
Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
670
発行年:
2002
総ページ数:
6
出版情報:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558996069 [1558996060]
言語:
英語
請求記号:
M23500/670
資料種別:
国際会議録

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