Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

著者名:

掲載資料名:

Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

670

発行年:

2002

総ページ数:

5

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996069 [1558996060]

言語:

英語

請求記号:

M23500/670

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014553
シリーズID:	PA00000011
会議名:	Symposium On Gate Stack And Silicide Issues in Silicon Processing
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.17-2001.04.19

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