Evolution of Defects Induced by High Energy He Implantation in Gold-Diffused Silicon

Evolution of Defects Induced by High Energy He Implantation in Gold-Diffused Silicon

著者名:

Bouayadi, R. El

掲載資料名:

Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

669

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558996052 [1558996052]

言語:

英語

請求記号:

M23500/669

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014552
シリーズID:	PA00000011
会議名:	Symposium On Si Front-End Processing
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.17-2001.04.19

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