Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation | 東京工業大学附属図書館文献データベース

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Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation

著者名:

Carvalho, C. Nunes de

Subrahmanyam, V.S.

Naia, M. Duarte

さらに 4 件

掲載資料名:

Amorphous and heterogeneous silicon-based films - 2001 : symposium held April 16-20, 2001, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

664

発行年:

2001

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558996007 [1558996001]

言語:

英語

請求記号:

M23500/664

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014547
シリーズID:	PA00000011
会議名:	Symposium on amorphous and heterogeneous silicon-based films
回次:	2001
会議開催地:	San Francisco, CA, USA
会議開催年:	2001.04.16-2001.04.20

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2 国際会議録 Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD Gordo, P.M., Subrahmanyam, V.S., Naia, M.D, Gil, C.L, de Lima, A.P., Lavareda, G., de Carvalho, C.N, Amaral, A. Trans Tech Publications	8 国際会議録 Study of Defects Produced by Laser Surface Melting Using Positron Annihilation Gil,C.Lopes, Marques,M.F.Ferreira, Lima,A.P.de, Vilar,R., Deus,A.M.de, Kogel,G., Triftshauser,W. Trans Tech Publications
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