A Method to Improve Activation of Implanted Dopants in SiC

A Method to Improve Activation of Implanted Dopants in SiC

著者名:

掲載資料名:

Microstructural processes in irradiated materials, 2000 : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

650

発行年:

2001

総ページ数:

10

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995604 [1558995609]

言語:

英語

請求記号:

M23500/650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014535
シリーズID:	PA00000011
会議名:	Symposium on microstructural processes in irradiated materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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